Cu wire bond parameter optimization on various bond pad metallization and barrier layer material schemes

The use of copper wire for semiconductor package assembly has been gradually gaining acceptance throughout the industry over the last decade. Although copper has several advantages over gold for wire bonding applications, the manufacturing difficulties using copper wire have made high volume, fine pitch copper bonding slow to materialize. In recent years with the spike in gold prices, copper wire has become even more attractive, and this has driven many studies on the topic.Due to the propensity for copper to work harden upon deformation, which occurs during the ball bonding process as the capillary tip smashes the ball into the bond pad, a high amount of stress is transferred into the bond pad structure. This can result in catastrophic defects such as dielectric cracking or pad cratering. The current study aims to quantify the level of underlying bond pad damage with respect to various bond pad metallization and barrier layer schemes. A first bond parameter optimization was completed on each experimental group. The results indicate that barrier layer structure and composition have a significant impact on the presence of pad cratering. The experimental group containing only TiN as the barrier material showed a high occurrence of cratering, while groups with Ti and TiW barrier metals showed no cratering, even if a TiN layer was on top of the Ti. The bond pad metal thickness, on the other hand, does not appear to play a significant role in the prevention of bond pad cratering. Metal thickness values ranging from 0.825 to 2.025 μm were evaluated, and none had bond pad cratering other than the group with TiN as the barrier metal. In addition to the first bond parameter evaluations with various bond pad and barrier metal combinations, the initial free air ball (FAB) optimization is discussed.     

Fast alternating direction implicit method for efficient transient thermal simulation of integrated circuits

This paper presents fast alternating direction implicit (FADI) method for efficient transient thermal simulation of integrated circuits. The FADI method is formulated from Peaceman–Rachford's ADI and Douglas–Gunn's ADI methods. The update procedure of the proposed method has basic implicit form that features derivative‐free right‐hand side and hence, better efficiency and conciseness. Subsequently, through the basic implicit form of FADI method, the relationship between classical Peaceman–Rachford's and Douglas–Gunn's ADI methods can be clarified and elucidated in detail. A unified boundary condition that can cater to common kinds of boundary conditions in thermal simulation is also introduced. To further accelerate FADI method, the graphics processing unit is also utilized through Compute Unified Device Architecture implementation. It is shown that high efficiency gain can be achieved using the proposed FADI method through large time step size and data parallelism, while maintaining stability and good accuracy. As numerical illustration, an integrated circuit structure with microchannel cooling is demonstrated. Numerical results further ascertain the cooling effect of the microchannels. Copyright © 2015 John Wiley & Sons, Ltd.     

Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A

Compact modeling of MOSFETs from a 0.35 μm SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible with the standard BSIM model set. The model presented exhibits convergent behavior and is shown to be experimentally accurate at 4 K. No design tool currently in place exhibits convergence and/or accuracy over this range. The Verilog-A approach also allows the embedding of nonlinear length, width and bias effects into BSIM calculated curves beyond those that can be achieved by the use of different BSIM parameter sets. Nonlinear dependences are necessary to capture effects particular to 4 K behavior, such as current kinks. The 4 K DC behavior is reproduced well by the compact model and the model seamlessly evolves during simulation of circuits and systems as the simulator encounters SOI MOSFETs with different lengths and widths. The incorporation of various length/width and bias dependent effects into one Verilog-A/BSIM4 library, therefore, produces one model for all sets of devices called up in a given product design kit (PDK) for this technology node.     

Synthesis and Characterization of Some Triphenyltin(IV) Complexes from Sterically Crowded [((E)-1-{2-Hydroxy-5-[(E)-2-(aryl)-1-diazenyl]phenyl}methylidene)amino]acetate Ligands and Crystal Structure Analysis of a Tetrameric Triphenyltin(IV) Compound

Four new triphenyltin(IV) complexes containing [((E)-1-{2-hydroxy-5-[(E)-2-(aryl)-1-diazenyl]phenyl}methylidene)amino]acetate ligands (L) have been synthesized with formulations of Ph₃SnLH. They have been studied by multinuclear (¹H, ¹³C, ¹¹⁹Sn) NMR, ¹¹⁹Sn M?ssbauer and IR spectroscopy. A full characterization of one complex, Ph₃SnL¹H (1), was accomplished by single crystal X-ray crystallography, which revealed the compound to be a macrocyclic tetramer. In the tetramer, the five coordinate tin atoms have distorted trigonal bipyramidal geometries with the three phenyl groups occupying equatorial positions, while an oxygen atom of the carboxylate group of one L ligand and the oxide O-atom (formerly the hydroxy group) of a second L ligand in an apical positions. The carboxylate ligands bridge adjacent tin atoms and coordinate in the zwitterionic form with the phenolic proton moved to the nearby nitrogen atom. ¹¹⁹Sn NMR results indicate that the tetrameric structures of the complexes in the solid state, in which the tin atoms are five-coordinated, dissociate in solution to yield four coordinate monomeric species.     

A Method of Magnesium Treatment for Producing Gravity-diecast Ductile Iron

Equipment for the in-stream treatment of ductile iron has been adapted for gravity-diecasting. The treatment unit consists of a pouring basin, reaction chamber, and a reservoir for holding treated iron. The device is highly mobile in so much that it can be transferred from furnace to successive dies and back again, allowing consecutive pouring. The authors have studied the effect of reaction chamber design and nodularising-alloy type on the microstructure of cast specimens, using three types of chamber design and three types of nodulariser at different temperatures. The results indicate that a carbide-free structure with a high nodule count of up to 1500 n/mm² within the as-cast structure of a diecast rod specimen of 30 mm dia. can be achieved using this treatment equipment, when employing suitable nodularising alloy and process chamber design.     

Small to medium size wind turbines: Local use of a local resource : Paper prepared for the World Renewable Energy Congress-V Florence, 20–25 September 1998

At a time when wind turbines are getting larger, and the electricity injected into the grid from turbines is becoming more competitive, VERGNET has chosen the small scale wind turbine side of the wind energy market to develop its business.     

Carotenoids and Their Geometry Isomers in Selected Tropical Fruits

This study determined the carotenoids content in cherry tomato, pink guava, and red grapefruit pulps and juices. Cherry tomato pulp exhibited the highest β-carotene content whereas pink guava pulp had the highest lycopene content. However, β-carotene and lycopene contents in the studied fruit juices were lower than their pulps in the same sample portion. Interestingly, six to twelve cis-isomers of carotenoids were identified in the fruit pulps and juices studied. A higher number of trace amounts of cis-carotenoids was found in fruit pulps as compared to juices. Therefore, consumption of whole fruit is recommended as the studied fruit juices have lower carotenoids content.     

开发定制功率模块解决方案:哪些是必须要考虑的

在过去的几年中,由于最终应用中节约成本和提高效率的严格功率设计约束,使得功率模块市场的需求迅速变化。本文概述了提供定制解决方案,在满足不断变化的功率模块设计和性能的市场需求时所要考虑的方方面面。     

Effects of Groundwater Table Position and Soil Properties on Stability of Slope during Rainfall

Rainfall, hydrological condition, and geological formation of slope are important contributing factors to slope failures. Parametric studies were carried out to study the effect of groundwater table position, rainfall intensities, and soil properties in affecting slope stability. Three different groundwater table positions corresponding to the wettest, typical, and driest periods in Singapore and four different rainfall intensities (9, 22, 36, and 80 mm/h) were used in the numerical analyses. Typical soil properties of two main residual soils from the Bukit Timah Granite and the sedimentary Jurong Formation in Singapore were incorporated into the numerical analyses. The changes in factor of safety during rainfall were not affected significantly by the groundwater table near the ground surface due to the relatively small changes in matric suction during rainfall. A delay in response of the minimum factor of safety due to rainfall and a slower recovery rate after rainfall were observed in slopes from the sedimentary Jurong Formation as compared to those slopes from the Bukit Timah Granite. Numerical analyses of an actual residual soil slope from the Bukit Timah Granite at Marsiling Road and a residual soil slope from the sedimentary Jurong Formation at Jalan Kukoh show good agreement with the trends observed in the parametric studies.